
@inproceedings{Agarwal02,
   Author = {Agarwal and H. Li and K. Roy},
   Title = {DRG-Cache: A Data Retention Gated-Ground Cache for Low Power},
   BookTitle = {39th Design Automation Conference (DAC)},
   Pages = {473--478},
   Year = {2002} }

@article{Agarwal03,
  author = {Agarwal and H. Li and K. Roy},
  title = "A Single-Vt Low-Leakage Gated-Ground Cache for Deep Submicron",
  journal = "IEEE Jour. Of Solid-State Circuits",
  volume = 35,
  number = 2,
  year = 2003,
  pages = {319--328}  }

@article{Andre05,
  author = {T. W. Andre and J. J. Nahas and C. K. Subramanian and B. J. Garni and H. S. Lin and A. Omair
            and Jr. W. L. Martino},
  title = "A 4-{M}b 0.18-$\mu$m {1T1MTJ} Toggle {MRAM} With Balanced Three Input Sensing Scheme
           and Locally Mirrored Unidirectional Write Drivers",
  journal = "IEEE Jour. Of Solid-State Circuits",
  volume = 40,
  number = 1,
  year = 2005,
  pages = {301--309}  }

@article{Asenov03,
  author = {A. Asenov and S. Kaya and A.R. Brown},
  title = "Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness",
  journal = "IEEE Transactions on Electron Devices",
  Volume = {50},
  number = {5},
  pages = {1254--1260},
  year = {2003},
}

@inproceedings{Baek05,
   Author = {I.G. Baek et. al.},
   Title = {Multi-layer cross-point binary oxide resistive memory ({O}x{RRAM}) for post-{NAND} storage application},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {750--753},
   Year = {2005} }

@misc{Balasubramanian09,
   Author = {Rabindranath Balasubramanian and Gregory Bakker},
   Title = {Programmable system on a chip for power-supply voltage and current monitoring and control},
   Year = {2009},
   note = "{US Patent pending, application number 12/350,419}"  }

@inproceedings{Beach08,
   Author = {R. Beach et. al.},
   Title = {A statistical study of magnetic tunnel junctions for high-density spin torque transfer-{MRAM (STT-MRAM)}},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1--4},
   Year = {2008} }

@inproceedings{Bedeschi08,
   Author = {F. Bedeschi et. al.},
   Title = {A Multi-Level-Cell Bipolar-Selected Phase-Change Memory},
   BookTitle = {IEEE International Solid-State Circuits Conference (ISSCC)},
   Pages = {23.5},
   Year = {2008} }

@article{Bedeschi09,
   Author = {Ferdinando Bedeschi et. al.},
   Title = {A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage},
   Journal = {IEEE Journal of Solid-State Circuits},
   Volume = {44},
   Number = {1},
   Pages = {217--227},
   Year = {2009} }

@inproceedings{Bhunia02,
   Author = {S. Bhunia and H. Li and K. Roy},
   Title = {A High Performance IDDQ Testable Cache for Scaled CMOS Technologies},
   BookTitle = {IEEE Proceedings of the 11th Asian Test Symposium (ATS'02)},
   Pages = {157--162},
   Year = {2002} }

@article{burr:scm08,
   Author = {G. W. Burr and B. N. Kurdi and J. C. Scott and C. H. Lam and K. Gopalakrishnan and R. S. Shenoty},
   Title = {Overview of candidate device technologies for storage-class memory},
   Journal = {IBM Journal Research and Device},
   Volume = {52},
   Number = {4/5},
   Pages = {449--464},
   Year = {2008} }

@misc{cadence,
   Author = {},
   Title = {{http://www.cadence.com}},
   Year = {} }

@article{Chua71,
   Author = {L. O. Chua},
   Title = {Memristor {--} The Missing Circuit Element},
   Journal = {IEEE Trans. Circuit Theory},
   Volume = {CT-18},
   Number = {5},
   Pages = {507--519},
   Year = {1971} }

@article{Chua76,
   Author = {L. O. Chua},
   Title = {Memristive Devices and Systems},
   Journal = {Proc. IEEE},
   Volume = {64},
   Pages = {209--223},
   Year = {1976} }

@inproceedings{Chen06,
   Author = {Y. C. Chen and C. T. Rettner and S. Raoux and G. W. Burr and S. H. Chen and R. M. Shelby and M. Salinga and et al.},
   Title = {Ultra-thin Phase-change Bridge Memory Device Using {G}e{S}b},
   BookTitle = {Proceedings of the IEEE International Electron Devices Meeting (IEDM)},
   Pages = {30.3.1--30.3.4},
   Year = {2006} }

@inproceedings{Chen07-iedm,
   Author = {W. S. Chen et. al.},
   Title = {A Novel Cross-Spacer Phase Change Memory with Ultra-Small Lithography Independent Contact Area},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {319--322},
   Year = {2007} }

@inproceedings{Chen08,
   Author = {Y. Chen and X. Wang and H. Li and H. Liu and D. Dimitrov},
   Title = {Design Margin Exploration of Spin-Torque Transfer {RAM (SPRAM)}},
   BookTitle = {International Symposium on Quality Electronic Design},
   Pages = {684--690},
   Year = {2008} }

@inproceedings{Chen09,
   Author = {Y. Chen and X. Wang},
   Title = {Compact Modeling and Corner Analysis of Spintronic Memristor},
   BookTitle = {IEEE/ACM International Symposium on Nanoscale Architectures 2009 (Nanoarch09)},
   Pages = {7--12},
   Year = {2009} }

@MISC{Chen:147727,
  Author = {Y. Chen and H. Li and H. Liu and R. Wang and D. Dimitrov},
  Title = {Spin-Transfer Torque Memory Non-Destructive Self-Reference Read},
  Note = {US Patent pending, application number 112/147,727}}

@MISC{Chen:198516,
  Author = {Y. Chen and H. Li and H. Liu and Y. Lu and S. Xue},
  Title = {Data Devices Including Multiple Error Correction Codes and Methods of Utilizing},
  Note = {US Patent pending, application number 112/198,516}}

@MISC{Chen:170549,
  Author = {Y. Chen and H. Li and H. Liu and Y. Lu and Y. Li},
  Title = {Transmission Gate-Based Spin-Transfer Torque Memory Unit},
  Note = {US Patent pending, application number 112/170,549}}

@inproceedings{Cho05,
   Author = {S. L. Cho et al.},
   Title = {Highly Scalable On-axis Confined Cell Structure for High Density {PRAM} beyond 256{M}b},
   BookTitle = {Symposium on VLSI Technology Digest of Technical Papers},
   Pages = {96--97},
   Year = {2005} }

@article{Diao07,
  author = {Z. Diao and Z. Li and S. Wang and Y. Ding and A. Panchula and E. Chen and L.-C. Wang and Y. Huai},
  title = "Spin-Transfer Torque Switching in Magnetic Tunnel Junctions and Spin-Transfer Torque
           Random Access Memory",
  journal = "Journal of Physics: Condensed matter",
  volume = {19},
  number = {16},
  pages = {165209},
  year = {2007}  }

@inproceedings{Xie:dac08,
   Author = {Xiangyu Dong and Xiaoxia Wu and Guangyu Sun and Yuan Xie and Hai Li and Yiran Chen},
   Title = {Circuit and microarchitecture evaluation of 3{D} stacking magnetic {RAM (MRAM)} as a universal memory replacement},
   BookTitle = {45th ACM/IEEE Design Automation Conference (DAC)},
   Pages = {554--559},
   Year = {2008} }

@inproceedings{xie:pcramsim,
   Author = {Xiangyu Dong and Norm Jouppi and Yuan Xie  },
   Title = {{PCRAM}sim: System-Level Performance, Energy, and Area Modeling for Phase-Change {RAM}},
   BookTitle = {Proceedings of International Conference on Computer-Aided Design (ICCAD)},
   Pages = {269--275},
   Year = {2009} }

@inproceedings{XIE:ASPDAC2009-3Dcost,
   Author = {Xiangyu Dong and Yuan Xie},
   Title = {System-level cost analysis and design exploration for three-dimensional integrated circuits {(3D ICs)}},
   BookTitle = {Asia and South Pacific Design Automation Conference (ASP-DAC 2009)},
   Pages = {234--241},
   Year = {2009} }

@article{Durlam03,
   Author = {M. Durlam et. al.},
   Title = {{A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects}},
   Journal = {IEEE Journal of Solid-State Circuits},
   Volume = {38},
   Number = {5},
   Pages = {769--773},
   Year = {2003} }

@inproceedings{Fantini08,
   Author = {P. Fantini and G. Betti Beneventi and A. Calderoni and L. Larcher and P. Pavan and F. Pellizzer},
   Title = {Characterization and modelling of low-frequency noise in {PCM} devices},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1--4},
   Year = {2008} }

@article{Fujimoto06,
   Author = {M. Fujimoto and H. Koyama and M. Konagai and Y. Hosoi and K. Ishihara and S. Ohnishi and N. Awaya},
   Title = {{TiO$_2$} Anatase Nanolayer on {TiN} Thin Film Exhibiting High-speed Bipolar Resistive Switching},
   Journal = {Applied Physics Letter},
   Volume = {89},
   Number = {22},
   Pages = {223509},
   Year = {2006} }

@article{Gibbons64,
   Author = {J. F. Gibbons and W. E. Beadle},
   Title = {Switching properties of thin {NiO} Films},
   Journal = {Solid State Electronics},
   Volume = {7},
   Pages = {785--797},
   Year = {1964} }

@inproceedings{Ha04,
   Author = {Y.K. Ha et. al.},
   Title = {{MRAM} with novel shaped cell using synthetic anti-ferromagnetic free layer},
   BookTitle = {VLSI Symposium on Technology},
   Pages = {24--25},
   Year = {2004} }

@inproceedings{Hanzawa07,
   Author = {S. Hanzawa et. al.},
   Title = {A 512{KB} Embedded {PRAM} with 416{KB\/s} Write Throughput at 100{$\mu$A} Cell Write Current},
   BookTitle = {IEEE International Solid-State Circuits Conference (ISSCC)},
   Pages = {26.2},
   Year = {2007} }

@misc{MRAM:NEC09,
   Author = {R. Hoding},
   Title = {{NEC develops 32 Megabit MRAM for embedded SoCs}},
   Year = {2009},
   note = "{EETimes, Feb. 12}"  }

@inproceedings{Ho09,
   Author = {Y. Ho and G. M. Huang and P. Li},
   Title = {Nonvolatile memristor memory: device characteristics and design implications},
   BookTitle = {IEEE/ACM 2009 International Conference on Computer-Aided Design (ICCAD)},
   Pages = {482--490},
   Year = {2009} }

@inproceedings{Hosomi05,
   Author = {M. Hosomi et. al.},
   Title = {A novel nonvolatile memory with spin torque transfer magnetization switching: {S}pin-{RAM}},
   BookTitle = {Proceeding of IEEE International Electron Device Meeting (IEDM)},
   Pages = {459--462},
   Year = {2005} }

@article{Hsu07,
   Author = {S. T. Hsu and T. Li},
   Title = {Resistance Random Access Memory Switching Mechanism},
   Journal = {Journal of Applied Physics},
   Volume = {101},
   Number = {2},
   Pages = {024517},
   Year = {2007} }

@inproceedings{xie:isqed06-3d,
   Author = {W. L. Hung and G. M. Link and Y. Xie and N. Vijaykrishnan and M. J. Irwin},
   Title = {Interconnect and Thermal-aware Floorplanning for 3{D} Microprocessors},
   BookTitle = {International Symposium on Quality Electronic Device},
   Pages = {98--104},
   Year = {2006} }

@inproceedings{Ielmini07,
   Author = {D. Ielmini and S. Lavizzari and D. Sharma and A. L. Lacaita},
   Title = {Physical interpretation, modeling and impact on phase change memory {(PCM)}
reliability of resistance drift due to chalcogenide structural relaxation},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {939--942},
   Year = {2007} }

@inproceedings{Im08,
   Author = {D. H. Im et. al.},
   Title = {A unified 7.5nm dash-type confined cell for high performance {PRAM} device},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1--4},
   Year = {2008} }

@article{Inoue,
   Author = {I. H. Inoue and S. Yasuda and H. Akinaga and H. Takagi},
   Title = {Nonpolar Resistance Switching of Metal/Binary-transition-metal Oxides/Metal
   Sandwiches: Homogeneous/Inhomogeneous Transition of Current Distribution},
   Journal = {Physical Review B},
   Volume = {77},
   Number = {3},
   Pages = {035105},
   Year = {2008} }

@misc{ITRS07,
   Author = {},
   Title = {{International Technology Roadmap for Semiconductor}},
   Year = {2007},
   note = "{http://www.itrs.net/}"  }

@misc{Johnson08,
   Author = {R. Colin Johnson},
   Title = {Memristors ready for prime time},
   Year = {2008},
   note = "{http://www.eetimes.com/show Article.jhtml?articleID=208803176}"  }

@misc{Johnson10,
   Author = {R. C. Johnson},
   Title = {Superlattices enable small, fast, low-power {RRAM}},
   Year = {2010},
   note = "{http://www. eetimes.com/showArticle.jhtml?articleID=222301490}"  }

@article{Janousch07,
   Author = {M. Janousch and G. I. Meijer and U. Staub and B. Delley and S. F. Karg and B. P. Andreasson},
   Title = {Role of Oxygen Vacancies in {C}r-Doped {SrTiO$_3$} for Resistance-Change Memory},
   Journal = {Adv. Mater.},
   Volume = {19},
   Number = {7},
   Pages = {2232--2235},
   Year = {2007} }

@article{Jeong03,
   Author = {Gitae Jeong and Wooyoung Cho and S. Ahn and Hongsik Jeong and Gwanhyeob Koh and Youngnam Hwang and K. Kim},
   Title = {A 0.24$\mu$m 2.0-{V} 1{T}1{MTJ} 16-kb Nonvolatile Magnetoresistance {RAM} With Self-Reference Sensing Scheme},
   Journal = {IEEE Jour. of Solid-State Circuits},
   Volume = {38},
   Number = {11},
   Pages = {1906-1910},
   Year = {2003} }

@article{Jung07,
   Author = {R. Jung et. al.},
   Title = {Decrease in Switching Voltage Fluctuation of {Pt/NiO$_x$/Pt} Structure by Process Control},
   Journal = {Applied Physics Letter},
   Volume = {91},
   Number = {2},
   Pages = {022112},
   Year = {2007} }

@inproceedings{Kawahara07,
   Author = {T. Kawahara et al.},
   Title = {2{M}b Spin-Transfer Torque RAM ({SPRAM}) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read},
   BookTitle = {Proc. IEEE International Solid-State Circuits Conference, Tech. Dig},
   Pages = {480--617},
   Year = {2007} }

@article{Kawahara08,
  author = {T. Kawahara et. al.},
  title = "2 {M}b {SPRAM} ({SP}in-Transfer Torque {RAM}) With Bit-by-Bit Bi-Directional
           Current Write and Parallelizing-Direction Current Read",
  journal = "IEEE Jour. of Solid-State Circuits",
  volume = 43,
  number = 1,
  year = 2008,
  pages = {109--120}  }

@inproceedings{Kim06,
   Author = {S. Kim and H.-S. P. Wong},
   Title = {Generalized Phase Change Memory Scaling Rule Analysis},
   BookTitle = {Non-Volatile Semiconductor Memory Workshop},
   Year = {2006} }

@inproceedings{Kinam07,
   Author = {K. Kinam and J. Gitae},
   Title = {Memory Technologies for sub-40nm Node},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {27--30},
   Year = {2007} }

@inproceedings{Kishi08,
   Author = {T. Kishi et. al.},
   Title = {Lower-current and fast switching of a perpendicular {TMR} for high speed and high density spin-transfer-torque {MRAM}},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1--4},
   Year = {2008} }

@inproceedings{Kozicki05,
   Author = {M.N. Kozicki and M. Balakrishnan and C. Gopalan and C. Ratnakumar and Mitkova},
   Title = {Programmable metallization cell memory based on {Ag-Ge-S and Cu-Ge-S} solid electrolytes},
   BookTitle = {Non-Volatile Memory Technology Symposium},
   Pages = {83--89},
   Year = {2005} }

@misc{Kwak09,
   Author = {Jongtae Kwak},
   Title = {Delay line circuit},
   Year = {2009},
   note = "{US Patent US 2009/0243689 A1}"  }

@inproceedings{Lai01,
   Author = {S. Lai and T. Lowrey},
   Title = {{OUM -- A} 180nm Nonvolatile Memory Cell Element Technology for Standalone and Embedded Applications},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {36.5.1--36.5.4},
   Year = {2001} }

@inproceedings{Lai03,
   Author = {S. Lai},
   Title = {Current Status of the Phase Change Memory and its Future},
   BookTitle = {Proceedings of the IEEE International Electron Devices Meeting (IEDM)},
   Pages = {10.1.1--10.1.4},
   Year = {2003} }

@misc{LaPedus09,
   Author = {Mark LaPedus},
   Title = {Unity rolls `storageclass' memory technology},
   Year = {2009},
   note = "{http://www.eetimes.eu/ 217500737}"  }

@inproceedings{Lee07-isscc,
   Author = {K-J. Lee et. al.},
   Title = {A 90nm 1.8{V} 512{M}b Diode-Switch {PRAM} with 266{MB}/s Read Throughput},
   BookTitle = {IEEE International Solid-State Circuits Conference (ISSCC)},
   Pages = {26.1},
   Year = {2007} }

@inproceedings{Lee09,
   Author = {Benjamin Lee and Engin Ipek and Onur Mutlu and Doug Burger},
   Title = {Architecting Phase Change Memory as a Scalable {DRAM} Alternative},
   BookTitle = {The 36th International Symposium on Computer Architecture (ISCA)},
   Page = {2-13},
   Year = {2009} }

@inproceedings{xie:isca06,
   Author = {F. Li and C. Nicopoulos and T. Richardson and Y. Xie and N. Vijaykrishnan and M. Kandemir},
   Title = {Design and management of 3{D} chip multiprocessors using network-in-memory},
   BookTitle = {International Symposium on Computer Architecture (ISCA'06)},
   Year = {2006} }

@inproceedings{Li09,
   Author = {H. Li and Y. Chen},
   Title = {An Overview of Nonvolatile Memory Technology and The Implication for Tools and Architectures},
   BookTitle = {Design, Automation and Test in Europe Conference and Exhibition},
   Pages = {731--736},
   Year = {2009} }

@MISC{Li:147723,
  Author = {H. Li and Y. Chen and H. Liu and K. Kim and H. Huang},
  Title = {Spin-Transfer Torque Memory Self-Reference Read Scheme},
  Note = {US Patent pending, application number 12/147,723}}

@MISC{Li:242331,
  Author = {H. Li and Y. Chen and H. Liu and X. Wang},
  Title = {Static Source Line in STAT-RAM},
  Note = {US Patent pending, application number 12/242,331}}

@MISC{Li:250027,
  Author = {H. Li and Y. Chen and H. Liu and H. Huang},
  Title = {Non-volatile Resistive Sense Memory On-Chip Cache},
  Note = {US Patent pending, application number 12/250,027}}

@MISC{Li:426098,
  title = {Write Current Compensation Using Word Line Boosting Circuitry},
  author = {H. Li and Y. Chen and H. Liu and H. Huang and R. Wang},
  note = {US Patent pending, application number 12/426,098}}

@MISC{Li:502194,
  Author = {H. Li and Y. Chen and D. Setiadi and H. Liu and B. Lee},
  Title = {Defective Bit Scheme for Multi-Layer Integrated Memory Device},
  Note = {US Patent pending, application number 12/502,194}}

@article{Liu00,
  author = {S. Q. Liu and N. J. Wu and A. Ignatiev},
  title = {Electric-pulse-induced Reversible Resistance Change Effect in Magnetoresistive Films},
  journal = {Applied Physics Letter},
  volume = {76},
  number = {19},
  pages = {2749},
  year = {2000}  }

@article{3D:LXB07,
   Author = {Gabriel H. Loh and Yuan Xie and Bryan Black },
   Title = {Processor Design in {3D} Die-Stacking Technologies},
   Journal = {IEEE Micro},
   Volume = {27},
   Number = {3},
   Pages = {31-48},
   Year = {2007} }

@article{Lou08,
  author = {X. Lou and Z. Gao and D. V. Dimitrov and M. X. Tang},
  title = {Demonstration of multilevel cell spin transfer switching in {MgO} magnetic tunnel junctions},
  journal = {Applied Physics Letter},
  volume = {93},
  pages = {242502},
  year = {2008}  }

@article{Lu09,
   Author = {Chih-Yuan Lu and Kuang-Yeu Hsieh and Rich Liu},
   Title = {Future challenges of flash memory technologies},
   Journal = {Microelectronic Engineering},
   Volume = {86},
   Number = {3},
   Pages = {283-286},
   Year = {2009} }

@inproceedings{Mantegazza07,
   Author = {D. Mantegazza and D. Ielmini and E. Varesi and A. Pirovano and A. L. Lacaita},
   Title = {Statistical analysis and modeling of programming and retention in {PCM} arrays},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {311--314},
   Year = {2007} }

@inproceedings{xie:glsvisl08-pram,
   Author = {Prasanth Mangalagiri et. al.},
   Title = {A low-power phase change memory based hybrid cache architecture},
   BookTitle = {Proceedings of the 18th ACM Great Lakes symposium on VLSI},
   Pages = {395--398},
   Year = {2008} }

@article{mram:ibm:maffitt,
   Author = {T. M. Maffitt et. al.},
   Title = {Design Considerations for {MRAM}},
   Journal = {IBM Journal of Research and Development},
      Year = {2006} }

@inproceedings{Miura07,
   Author = {K. Miura et. al.},
   Title = {A novel {SPRAM} ({SP}in-transfer torque {RAM}) with a synthetic ferrimagnetic free layer
   for higher immunity to read disturbance and reducing write-current dispersion},
   BookTitle = {IEEE VLSI Symposium on Technology},
   Pages = {234--235},
   Year = {2007} }

@inproceedings{PRAM:IBM,
    author={Moinuddin K. Qureshi and Viji Srinivasan and Jude A. Rivers},
    title={{Scalable High Performance Main Memory System Using Phase-Change Memory Technology}},
    booktitle={36th International Symposium on Computer Architecture (ISCA)},
    year={2009} }

@inproceedings{Motoyoshi04,
   Author = {M. Motoyoshi et. al.},
   Title = {A study for 0.18{$\mu$}m high-density {MRAM}},
   BookTitle = {IEEE VLSI Symposium on Technology},
   Pages = {22--23},
   Year = {2004} }

@article{Xie:TC09,
   Author = {M. Mutyam and Feng Wang and R. Krishnan and V. Narayanan and M. Kandemir and Y. Xieand M. J. Irwin},
   Title = {Process-Variation-Aware Adaptive Cache Architecture and Management},
   Journal = {IEEE Transactions on Computers},
   Volume = {58},
   Number = {7},
   Pages = {865--877},
   Year = {2009} }

@inproceedings{Nebashi09,
   Author = {R. Nebashi et. al.},
   Title = {A 90nm 12ns 32{M}b {2T1MTJ MRAM}},
   BookTitle = {IEEE International Solid-State Circuits Conference (ISSCC)},
   Pages = {462--463},
   Year = {2009} }

@inproceedings{Nirschl07,
   Author = {T. Nirschl et. al.},
   Title = {Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory},
   BookTitle = {Proceedings of the IEEE International Electron Device Meeting Technology (IEDM)},
   Pages = {461--464},
   Year = {2007} }

@inproceedings{Oh06,
   Author = {J. H. Oh and J. H. Park and Y. S. Lim and H. S. Lim and Y. T. Oh and J. S. Kim and J. M. Shin and et al.},
   Title = {Full Integration of Highly Manufacturable 512{M}b {PRAM} Based on 90nm Technology},
   BookTitle = {Proceedings of the IEEE International Electron Devices Meeting},
   Pages = {2.6.1--2.6.4},
   Year = {2006} }

@inproceedings{xie:aspdac06,
   Author = {O. Ozturk and Feng Wang and M. Kandemir and Yuan Xie},
   Title = {Optimal topology exploration for application-specific {3D} architectures},
   BookTitle = {Asia and South Pacific Design Automation Conference},
   Pages = {6},
   Year = {2006} }

@inproceedings{Park04,
   Author = {Jong-Ho Park et. al.},
   Title = {8{G}b {MLC} (multi-level cell) {NAND} flash memory using 63nm process technology},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {876--876},
   Year = {2004} }

@inproceedings{xie:isca08,
   Author = {Dongkook Park and S. Eachempati and R. Das and A. K. Mishra and Y. Xie and N. Vijaykrishnan and C. R. Das},
   Title = {{MIRA}: {A} Multi-layered On-Chip Interconnect Router Architecture},
   BookTitle = {35th International Symposium on Computer Architecture (ISCA)},
   Pages = {251--261},
   Year = {2008} }

@inproceedings{PRAM:ST2004,
   Author = {F. Pellizzer and A. Pirovano and F. Ottogalli and M. Magistretti and M. Scaravaggi and et al},
   Title = {{Novel }$\mu${Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications}},
   BookTitle = {IEEE Symposium on VLSI Technology 2004},
   Pages = {18--19},
   Year = {2004} }

@article{Pershin08,
   Author = {Yu. V. Pershin and M. Di Ventra},
   Title = {Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics},
   Journal = {Phys. Rev. B, Condens. Matter},
   Volume = {78},
   Number = {11},
   Pages = {113309},
   Year = {2008} }

@inproceedings{Pirovano03,
   Author = {A. Pirovano and A. L. Lacaita and A. Benvenuti and F. Pellizzer and S. Hudgens and R. Bez},
   Title = {Scaling Analysis of Phase-Change Memory Technology},
   BookTitle = {Proceedings of the IEEE International Electron Devices Meeting (IEDM)},
   Pages = {29.6.1--29.6.4},
   Year = {2003} }

@article{Pirovano04,
   Author = {A. Pirovano and A. L. Lacaita and S. A. Kostylev and A. Benvenuti and R. Bez},
   Title = {Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials},
   Journal = {IEEE Transactions on Electron Devices},
   Volume = {51},
   Pages = {714--719},
   Year = {2004} }

@article{Raoux08,
   Author = {S. Raoux and G. W. Burr and M. J. Breitwisch and C. T. Rettner and Y.-C.Chen and R. M. Shelby and M. Salinga and et al.},
   Title = {Phase-Change Random Access Memory: A Scalable Technology},
   Journal = {IBM Journal Research and Device},
   Volume = {52},
   Number = {4/5},
   Page = {465--479},
   Year = {2008} }

@inproceedings{Salahuddin07,
   Author = {S. Salahuddin and D. Datta and P. Srivastava and S. Datta},
   Title = {Quantum Transport Simulation of Tunneling Based Spin Torque Transfer ({STT}) Devices: Design Trade offs and Torque Efficiency},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {121--124},
   Year = {2007} }

@inproceedings{Sandre10,
   Author = {G. De Sandre et. al.},
   Title = {A 90nm 4{M}b Embedded Phase-Change Memory with 1.2{V} 12ns Read Access Time and 1{MB/s} Write Throughput},
   BookTitle = {IEEE International Solid-State Circuits Conference (ISSCC)},
   Pages = {14.7},
   Year = {2010} }

@MISC{Spectrum09,
  title = {Spintronic Memristors},
  authoer = {IEEE spectrum},
  Year = {March 2009},
  note = {http://www.spectrum.ieee.org/semiconductors/devices/ spintronic-memristors/0}
}
@article{Song08,
   Author = {Ihun Song et. al.},
   Title = {Short Channel Characteristics of {G}allium-{I}ndium-{Z}inc-{O}xide Thin Film
   Transistors for Three-Dimensional Stacking Memory},
   Journal = {IEEE Electron Device Letters},
   Volume = {29},
   Pages = {549--552},
   Year = {2008} }

@inproceedings{XIE:ASPDAC09-3D,
   Author = {S. Sridharan and M. DeBole and Guangyu Sun and Yuan Xie and V. Narayanan},
   Title = {A criticality-driven microarchitectural three dimensional (3D) floorplanner},
   BookTitle = {Asia and South Pacific Design Automation Conference},
   Pages = {763--768},
   Year = {2009} }

@article{Strukov08,
   Author = {Dmitri B. Strukov and Gregory S. Snider and Duncan R. Stewart and R. StanleyWilliams},
   Title = {The missing memristor found},
   Journal = {Nature},
   Volume = {453},
   Pages = {80--83},
   Year = {2008} }

@inproceedings{XIE:HPCA09,
   Author = {Guangyu Sun and Xiangyu Dong and Yuan Xie and Jian Li and Yiran Chen},
   Title = {A novel architecture of the 3{D} stacked {MRAM L2} cache for {CMPs}},
   BookTitle = {IEEE 15th International Symposium on High Performance Computer Architecture, 2009.  },
   Pages = {239--249},
   Year = {2009} }

@misc{synopsys,
   Author = {},
   Title = {{http://www.synopsys.com}},
   Year = {} }

@inproceedings{MRAM:TTO+06,
   Author = {Hiroaki Tanizaki and Takaharu Tsuji and Jun Otani and et al.},
   Title = {{A high-density and high-speed {1T-4MTJ MRAM} with Voltage Offset Self-Reference Sensing Scheme}},
   BookTitle = {IEEE Asian Solid-State Circuits Conference },
   Pages = {303--306},
      Year = {2006} }

@inproceedings{Tehrani00,
   Author = {S. Tehrani et al},
   Title = {Recent developments in magnetic tunnel junction {MRAM}},
   BookTitle = {IEEE Trans. Magn.},
   Volume = {36},
   Pages = {2752--2757},
   Year = {2000} }

@article{Tour08,
   Author = {J. M. Tour and T. He},
   Title = {The Fourth Element},
   Journal = {Nature},
   Volume = {453},
   Number = {7191},
   Pages = {42--43},
   Year = {2008} }

@inproceedings{xie:iccd05-3d,
   Author = {Yuh-Fang Tsai and Yuan Xie and N. Vijaykrishnan and M. J. Irwin},
   Title = {Three-dimensional cache design exploration using {3DC}acti},
   BookTitle = {International Conference on Computer Design (ICCD)},
   Pages = {519--524},
   Year = {2005} }

@article{XIE:TVLSI2008-3DCacti,
   Author = {Yuh-Fang Tsai and Feng Wang and Yuan Xie and N. Vijaykrishnan and M. J. Irwin},
   Title = {Design Space Exploration for 3-{D} Cache},
   Journal = { IEEE Transactions on Very Large Scale Integration (VLSI) Systems},
   Volume = {16},
   Number = {4},
   Pages = {444--455},
   Year = {2008} }

@inproceedings{Xie:MTDT09,
   Author = {B. Vaidyanathan and Yu Wang and Yuan Xie},
   Title = {Cost-Aware Lifetime Yield Analysis of Heterogeneous {3D} On-chip Cache},
   BookTitle = {IEEE International Workshop on Memory Technology, Design, and Testing},
   Pages = {65--70},
   Year = {2009} }

@inproceedings{Villa10,
   Author = {C. Villa and D. Mills and G. Barkley and H. Giduturi and S. Schippers and D. Vimercati},
   Title = {A 45nm 1{G}b 1.8{V} Phase-Change Memory},
   BookTitle = {IEEE International Solid-State Circuits Conference (ISSCC)},
   Pages = {14.8},
   Year = {2010} }

@article{Wang09,
   Author = {X. Wang et al},
   Title = {Spin Memristor through Spin-Torque-Induced Magnetization Motion},
   Journal = {IEEE Electron Device Lett.},
   Volume = {30},
   Number = {3},
   Pages = {294--297},
   Year = {2009} }

@inproceedings{XIE:ICCD08-3D,
   Author = {Xiaoxia Wu and Yibo Chen and Yuan Xie and Krish Chakrabarty},
   Title = {Test-Access Mechanism Optimization for Core-Based Three-Dimensional {SOC}s},
   BookTitle = {International Conference on Computer Design},
   Year = {2008} }

@inproceedings{xie:iccd07-3d,
   Author = {Xiaoxia Wu and Paul Frankstein and Yuan Xie},
   Title = {Scan Chain Design for Three-dimentional{(3D) ICs}},
   BookTitle = {International Conference on Computer Design},
   Year = {2007} }

@inproceedings{Xie:ISCA09,
   Author = {Xiaoxia Wu and Jian Li and Lixin Zhang and Evan Speight and Ram Rajamony and Yuan Xie},
   Title = {Hybrid Cache Architecture with Disparate Memory Technologies},
   BookTitle = {International Conference on Computer Architecture (ISCA)},
   Pages = {34--45},
   Year = {2009} }

@inproceedings{xie:tutorial-micro06,
   Author = {Y. Xie and G. Loh and B. Black and K. Bernstein},
   Title = {Tutorial: {3D} Integration  for Microarchitecture},
   BookTitle = {The 39th Annual IEEE/ACM International Symposium on Microarchitecture},
   Year = {2006} }

@article{xie:jetcs06,
   Author = {Y. Xie and G. Loh and B. Black and K. Bernstein},
   Title = {Design Space Exploration for 3{D} Architectures},
   Journal = {ACM Journal of Emerging Technologies in Compuing Systems},
   Volume = {2},
   Number = {2},
   Pages = {65--103},
   Year = {2006} }

@misc{xie_url,
   note = {{http://www.cse.psu.edu/$\sim$yuanxie/}},
   Year = {} }

@inproceedings{Xu10,
   Author = {W. Xu and T. Zhang},
   Title = {Using Time-Aware Memory Sensing to Address Resistance Drift Issue in Multi-Level Phase Change Memory},
   BookTitle = {IEEE International Symposium on Quality Electronic Design (ISQED)},
   Page = {},
   Year = {2010} }

@MISC{Yan4430255,
  title = {Non-ohmic device using {$TiO_2$}},
  author = {Man F. Yan},
  note = {US Patent number 4430255} }

@inproceedings{Zhang07,
   Author = {Y. Zhang et al.},
   Title = {An intergrated phase change memory cell with {G}e nanowire diode for cross-point memory},
   BookTitle = {Proc. of Symposium on VLSI Technology Digest of Technical Papers},
   Page = {98--99},
   Year = {2007} }

@inproceedings{MRAM:ZBM+06,
   Author = {W. Zhao and E. Belhaire and Q. Mistral and C. Chappert and V. Javerliac and B. Dieny and E. Nicolle},
   Title = {Macro-model of Spin-Transfer Torque based Magnetic Tunnel Junction device for hybrid Magnetic-{CMOS} design},
   BookTitle = {IEEE International Behavioral Modeling and Simulation Workshop},
   Pages = {40--43},
   Year = {2006} }
